This chapter covers Limitation of conventional solid state devices at Microwaves; Transistors (Bipolar, FET); Diodes (Tunnel, Varactor, PIN), Transferred Electron Devices (Gunn diode); Avalanche transit time effect (IMPATT, TRAPATT, SBD); Microwave Amplification by Stimulated Emission of Radiation (MASER), etc. and the related numericals.
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